參數(shù)資料
型號： 74LV132PWDH
廠商： NXP SEMICONDUCTORS
元件分類： 通用總線功能
英文描述： Quad 2-input NAND Schmitt-trigger
中文描述： LV/LV-A/LVX/H SERIES, QUAD 2-INPUT NAND GATE, PDSO14
文件頁數(shù)： 4/12頁
文件大小： 117K
代理商： 74LV132PWDH
Philips Semiconductors
Product specification
74LV132
Quad 2-input NAND Schmitt-trigger
1998 Apr 28
4
ABSOLUTE MAXIMUM RATINGS
1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).
Voltages are referenced to GND (ground = 0V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
V
CC
DC supply voltage
–0.5 to +7.0
V
±
I
IK
DC input diode current
V
I
< –0.5 or V
I
> V
CC
+ 0.5V
20
mA
±
I
OK
DC output diode current
V
O
< –0.5 or V
O
> V
CC
+ 0.5V
50
mA
±
I
O
DC output source or sink current
– standard outputs
–0.5V < V
O
< V
CC
+ 0.5V
25
mA
±
I
GND
,
±
I
CC
DC V
CC
or GND current for types with
– standard outputs
50
mA
T
stg
Storage temperature range
–65 to +150
°
C
P
TOT
Power dissipation per package
– plastic DIL
– plastic mini-pack (SO)
– plastic shrink mini-pack (SSOP and TSSOP)
for temperature range: –40 to +125
°
C
above +70
°
C derate linearly with 12 mW/K
above +70
°
C derate linearly with 8 mW/K
above +60
°
C derate linearly with 5.5 mW/K
750
500
400
mW
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
DC CHARACTERISTICS
Over recommended operating conditions. Voltages are referenced to GND (ground = 0V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
-40
°
C to +85
°
C
TYP
1
-40
°
C to +125
°
C
MIN
0.9
UNIT
MIN
0.9
MAX
MAX
V
CC
= 1.2V
V
CC
= 2.0V
V
CC
= 2.7 to 3.6V
V
CC
= 4.5 to 5.5V
V
CC
= 1.2V
V
CC
= 2.0V
V
CC
= 2.7 to 3.6V
V
CC
= 4.5 to 5.5
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
–I
O
= 100
μ
A
V
IH
HIGH level Input
voltage
1.4
1.4
V
2.0
2.0
0.7*V
CC
0.7*V
CC
0.3
0.3
V
IL
LOW level Input
voltage
0.6
0.6
V
0.8
0.8
0.3*V
CC
0.3*V
CC
1.2
HIGH level
voltage; all outputs
voltage all out uts
t
t
1.8
2.0
1.8
V
OH
2.5
2.7
2.5
V
2.8
3.0
2.8
4.3
4.5
4.3
V
OH
HIGH level output
voltage;
STANDARD
outputs
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
–I
O
= 6mA
2.40
2.82
2.20
V
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
–I
O
= 12mA
3.60
4.20
3.50
V
CC
= 1.2V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 2.0V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 2.7V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 3.0V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
V
CC
= 4.5V; V
I
= V
IH
or V
IL;
I
O
= 100
μ
A
0
LOW level
voltage; all outputs
voltage all out uts
t
t
0
0.2
0.2
V
OL
0
0.2
0.2
V
0
0.2
0.2
0
0.2
0.2
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