參數(shù)資料
型號: 74F225
廠商: NXP Semiconductors N.V.
英文描述: BRIDGE RECTIFIER, 4A, 800V
中文描述: 16X5異步FIFO的三態(tài)
文件頁數(shù): 6/14頁
文件大?。?/td> 122K
代理商: 74F225
Philips Semiconductors
Product specification
74F225
16
×
5 asynchronous FIFO (3-State)
June 15, 1992
6
DC ELECTRICAL CHARACTERISTICS
(Over recommended operating free-air temperature range unless otherwise noted.)
SYMBOL
PARAMETER
TEST CONDITIONS
1
LIMITS
TYP
2
UNIT
MIN
2.5
MAX
IR, OR,
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OH
= MAX
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OH
= MAX
V
CC
= MIN, V
IL
= MAX
V
IH
= MIN, I
OL
= MAX
V
CC
= MIN, I
I
= I
IK
V
CC
= MAX, V
I
= 7.0V
V
CC
= MAX, V
I
= 2.7V
V
CC
= MAX, V
I
= 0.5V
±
10%V
CC
±
5%V
CC
±
10%V
CC
±
5%V
CC
±
10%V
CC
±
5%V
CC
V
V
OH
High-level output voltage
UNCPOUT
2.7
V
Data
2.4
V
outputs
2.7
V
V
OL
Low-level output voltage
0.35
0.50
V
0.35
-0.73
0.50
-1.2
100
V
V
V
IK
I
I
I
IH
I
IL
Input clamp voltage
Input current at maximum input voltage
μ
A
μ
A
μ
A
μ
A
High–level input current
Low–level input current
Offset–output current,
High–level voltage applied
Offset–output current,
Low–level voltage applied
Short-circuit output current
3
Supply current (total)
20
–20
I
OZH
V
CC
= MAX, V
I
= 2.7V
50
I
OZL
V
CC
= MAX, V
I
= 0.5V
–50
μ
A
I
OS
I
CC
V
CC
= MAX
V
CC
= MAX
-60
-150
95
mA
mA
65
NOTES:
1. For conditions shown as MIN or MAX, use the appropriate value specified under recommended operating conditions for the applicable type.
2. All typical values are at V
= 5V, T
= 25
°
C.
3. Not more than one output should be shorted at a time. For testing I
, the use of High-speed test apparatus and/or sample-and-hold
techniques are preferable in order to minimize internal heating and more accurately reflect operational values. Otherwise, prolonged shorting
of a High output may raise the chip temperature well above normal and thereby cause invalid readings in other parameter tests. In any
sequence of parameter tests, I
OS
tests should be performed last.
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