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參數(shù)資料
| 型號： | 74F219A |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | 64-bit TTL bipolar RAM, non-inverting(3-State)(64位TTL雙極性RAM，同向（三態(tài)）) |
| 中文描述： | 64位TTL雙極內存，非反相（3態(tài)）（64位的TTL雙極性內存，同向（三態(tài)）） |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 74F219A |
Philips Semiconductors
Product specification
74F219A
64-bit TTL bipolar RAM, non-inverting (3-State)
1996 Jan 05
5
AC ELECTRICAL CHARACTERISTICS
LIMITS
SYMBOL
PARAMETER
TEST
CONDITION
T
amb
= +25
°
C
V
CC
= +5.0V
C
L
= 50pF, R
L
= 500
MIN
TYP
T
amb
= 0
°
C to +70
°
C
V
CC
= +5.0V
±
10%
C
L
= 50pF, R
L
= 500
MIN
UNIT
MAX
MAX
t
PLH
t
PHL
t
PZH
t
PZL
t
PHZ
t
PLZ
t
PZH
t
PZL
t
PHZ
t
PLZ
Access time
Propagation delay
An to Qn
Waveform 1
2.5
2.0
5.0
4.5
8.0
8.0
2.5
2.0
8.0
8.0
ns
Enable time
CE to Qn
Waveform 2
1.5
2.5
3.0
4.0
6.0
7.0
1.5
2.0
7.0
7.5
ns
Disable time
CE to Qn
Waveform 3
2.5
1.5
4.5
3.0
7.0
5.5
2.0
1.0
8.0
6.0
ns
Write recovery time
Enable time
WE to Qn
Waveform 4
2.0
3.0
3.5
4.5
6.5
7.5
1.5
2.5
7.0
8.0
ns
Disable time
WE to Qn
Waveform 4
3.0
1.5
5.0
3.5
8.0
6.0
2.5
1.5
9.0
7.0
ns
AC SETUP REQUIREMENT
LIMITS
SYMBOL
PARAMETER
TEST
CONDITION
T
amb
= +25
°
C
V
= +5.0V
C
L
= 50pF, R
L
= 500
MIN
TYP
T
amb
= 0
°
C to +70
°
C
V
= +5.0V
±
10%
C
L
= 50pF, R
L
= 500
MIN
UNIT
MAX
MAX
t
su
(H)
t
su
(L)
t
h
(H)
t
h
(L)
t
su
(H)
t
su
(L)
t
h
(H)
t
h
(L)
Setup time, high or low
An to WE
Waveform 4
4.5
4.5
5.0
5.0
ns
Hold time, high or low
An to WE
Waveform 4
0
0
0
0
ns
Setup time, high or low
Dn to WE
Waveform 4
8.0
7.5
9.0
8.5
ns
Hold time, high or low
Dn to WE
Waveform 4
0
0
0
0
ns
t
su
(L)
Setup time, low
CE (falling edge) to WE (falling edge)
Waveform 4
0
0
ns
t
h
(L)
Hold time, low
WE (falling edge) to WE (rising edge)
Waveform 4
6.5
7.5
ns
t
w
(L)
Pulse width, low
WE
Waveform 4
7.0
8.0
ns
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