參數(shù)資料
型號(hào)： 74AVC16835DGG
廠商： NXP SEMICONDUCTORS
元件分類： 通用總線功能
英文描述： 18-bit registered driver 3-State
中文描述： AVC SERIES, 18-BIT DRIVER, TRUE OUTPUT, PDSO56
封裝： PLASTIC, TSSOP-56
文件頁(yè)數(shù)： 5/10頁(yè)
文件大?。?/td> 89K
代理商： 74AVC16835DGG
Philips Semiconductors
Preliminary specification
74AVC16835
18-bit Registered Driver (3-State)
1999 Jul 23
5
ABSOLUTE MAXIMUM RATINGS
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER
V
CC
DC supply voltage
I
IK
DC input diode current
V
I
DC input voltage
I
OK
DC output diode current
V
O
DC output voltage; output 3-State
DC output voltage;
output HIGH or LOW state
I
O
DC output source or sink current
I
GND
, I
CC
DC V
CC
or GND current
T
stg
Storage temperature range
Power dissipation per package
–plastic thin-medium-shrink (TSSOP)
NOTE:
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
CONDITIONS
RATING
–0.5 to +4.6
–50
–0.5 to 4.6
50
–0.5 to 4.6
UNIT
V
mA
V
mA
V
V
I
For all inputs
1
V
O
V
CC
or V
O
Note 1
0
0
V
O
Note 1
–0.5 to V
CC
+0.5
V
V
O
= 0 to V
CC
50
100
mA
mA
°
C
–65 to +150
P
TOT
For temperature range: –40 to +125
°
C
above +55
°
C derate linearly with 8 mW/K
600
mW
DC ELECTRICAL CHARACTERISTICS
Over recommended operating conditions. Voltage are referenced to GND (ground = 0 V).
LIMITS
SYMBOL
PARAMETER
TEST CONDITIONS
Temp = -40
°
C to +85
°
C
MIN
V
CC
0.65V
CC
1.7
2.0
–
–
–
–
UNIT
TYP
1
–
0.9
1.2
1.5
–
0.9
1.2
1.5
MAX
–
–
–
–
GND
0.35V
CC
0.7
0.8
V
CC
= 1.2 V
V
CC
= 1.65 to 1.95 V
V
CC
= 2.3 to 2.7 V
V
CC
= 3.0 to 3.6 V
V
CC
= 1.2 V
V
CC
= 1.65 to 1.95 V
V
CC
= 2.3 to 2.7 V
V
CC
= 3.0 to 3.6 V
V
= 1.65 to 3.6 V; V
= V
or V
;
CC
I
O
μ
A
V
CC
= 1.65 V; V
I
= V
IH
or V
IL
; I
O
= –4 mA
V
CC
= 2.3 V; V
I
= V
IH
or V
IL
; I
O
= –8 mA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL
; I
O
= –12 mA
V
= 1.65 to 3.6 V; V
= V
or V
;
CC
I
O
μ
A
V
CC
= 1.65 V; V
I
= V
IH
or V
IL
; I
O
= 4 mA
V
CC
= 2.3 V; V
I
= V
IH
or V
IL
; I
O
= 8 mA
V
CC
= 3.0 V; V
I
= V
IH
or V
IL
; I
O
= 12 mA
= 1 65 to 3 6 V;
V
CC
= 1.65 to 3.6 V
V
I
= V
CC
or GND
V
CC
= 0 V; V
I
or V
O
= 3.6 V
V
CC
= 1.65 to 3.6 V; V
I
= V
CC
or GND
V
CC
= 1.65 to 2.7 V; V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
V
CC
= 3.0 to 3.6 V; V
I
= V
IH
or V
IL
;
V
O
= V
CC
or GND
V
CC
= 1.65 to 2.7 V; V
I
= V
CC
or GND; I
O
= 0
V
CC
= 3.0 to 3.6 V; V
I
= V
CC
or GND; I
O
= 0
V
IH
HIGH level Input voltage
HIGH level In ut voltage
V
V
IL
LOW level Input voltage
LOW level In ut voltage
V
V
CC
0 20
0.20
V
CC
–
I
IH
IL
V
OH
HIGH level output voltage
V
CC
0.45
V
CC
0.55
V
CC
0.70
V
CC
0.10
V
CC
0.28
V
CC
0.32
–
–
–
V
–
GND
0 20
0.20
I
IH
IL
V
OL
LOW level output voltage
–
–
–
0.10
0.26
0.36
0.45
0.55
0.70
V
I
Input leakage current
–
0.1
2.5
A
μ
I
I
OFF
I
IHZ
/I
ILZ
3-State output OFF-state current
3-State output OFF-state current
–
–
0.1
0.1
10
μ
A
μ
A
12.5
I
OZ
3-State output OFF-state current
3-State out ut OFF-state current
–
0.1
5
μ
A
–
0.1
10
I
CC
Quiescent supply current
–
–
0.1
0.2
20
40
μ
A
NOTES:
1. All typical values are at T
amb
= 25
°
C.
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