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參數(shù)資料
| 型號： | 6MBI150U4B-170 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT MODULE |
| 中文描述： | 200 A, 1700 V, N-CHANNEL IGBT |
| 封裝： | MODULE-35 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 482K |
| 代理商： | 6MBI150U4B-170 |
H04-004-03a
MS5F6305
13
4
3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified
）
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
(*1) All terminals should be connected together when isolation test will be done.
(*2) Two thermistor terminals should be connected together, each other terminals should be connected together
and shorted to base plate when isolation test will be done.
(*3) Recommendable Value : Mounting 2.5~3.5 Nm (M5)
4. Electrical characteristics ( at Tj= 25°C unless otherwise specified)
(*4) Biggest internal terminal resistance among arm.
-
-
VGE=±15V
Rg = 3.3
Ω
m
Ω
R lead
-
3.40
0.39
0.05
0.55
0.09
2.35
2.55
Vcc = 900V
Ic = 150A
-
nF
14
0.62
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
-
-
-
-
-
-
VF
(terminal)
VF
(chip)
trr
3.20
2.25
2.65
-
-
Units
-
2.40
Maximum
Ratings
1700
-
-
2.80
2.95
-
-
V
8.5
V
6.5
-
-
-
IGES
ICES
nA
1.0
mA
200
VGE=±20V
VCE = 20V
VCE = 0V
Conditions
VGE = 0V
VCE = 1700V
-Ic pulse
Pc
Tj
Tstg
Screw
Torque
-
Mounting (*3)
Storage temperature
Isolation
voltage
Viso
between terminal and copper base (*1)
between thermistor and others (*2)
max.
typ.
3400
VAC
N m
3.5
Ic
Icp
Symbols
Units
-Ic
min.
Characteristics
-40 ~ +125
300
735
Gate-Emitter voltage
Collector current
Junction temperature
Collector Power Dissipation
150
400
300
°C
W
150
150
A
AC : 1min.
1ms
1 device
V
V
±20
200
VGES
1ms
Continuous
Items
Symbols
Conditions
VCES
Collector-Emitter voltage
μ
s
1.50
0.30
2.70
1.20
0.60
-
-
V
2.00
-
1.80
2.15
-
0.6
-
μ
s
IF = 150A
-
-
IF = 150A
VCE=10V,VGE=0V,f=1MHz
toff
tf
tr
tr (i)
-
VGE=0V
Ic = 150mA
Tj= 25°C
Tj=125°C
Tj= 25°C
Tj=125°C
VGE=15V
Ic = 150A
4.5
Lead resistance,
terminal-chip(*4)
ton
VGE(th)
Items
VCE(sat)
(terminal)
Cies
VCE(sat)
(chip)
3450
T
Resistance
R
T = 25°C
T =100°C
B
T = 25/50°C
3305
3375
Turn-on time
Turn-off time
Ω
465
495
520
-
5000
-
Forward on voltage
Reverse recovery time
K
I
Zero gate voltage
Collector current
Gate-Emitter
leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
Input capacitance
B value
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