參數(shù)資料
型號(hào): 6MBI100S-060
廠商: FUJI ELECTRIC CO LTD
元件分類(lèi): IGBT 晶體管
英文描述: IGBT Module
中文描述: 100 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-39
文件頁(yè)數(shù): 4/13頁(yè)
文件大小: 535K
代理商: 6MBI100S-060
H04-004-03
MS5F5327
13
3. Absolute Maximum Ratings ( at Tc= 25C unless otherwise specified
Items
Symbols
Conditions
Maximum
Ratings
600
Units
Collector-Emitter voltage
V
CES
V
GES
V
Gate-Emitter voltage
+-20
100
V
Ic
Continuous
Collector current
Ic pulse
-Ic
1ms
200
A
100
-Ic pulse
Pc
1ms
1 device
200
400
Collector Power Dissipation
W
Junction temperature
Tj
150
C
Storage temperature
Isolation voltage
(*1)
Mounting Screw Torque
(*2)
(*1) All terminals should be connected together when isolation test will be done.
(*2) Recommendable Value : 2.5~3.5 Nm (M5)
Tstg
Viso
-40~ +125
2500
C
V
AC : 1min.
3.5
Nm
4. Electrical characteristics ( at Tj= 25C unless otherwise specified)
Characteristics
min.
typ.
Items
Symbols
Conditions
Max.
Units
Zero gate voltage
Collector current
Gate-Emitter leakage current
Gate-Emitter
threshold voltage
Collector-Emitter
saturation voltage
I
CES
V
GE
=
0 V,
V
CE
=
600 V
1.0
mA
I
GES
V
CE
=
0 V,
V
GE
=
+-20 V
200
nA
V
GE(th)
V
CE
=
20 V,
Ic =
100 mA
5.5
7.8
8.5
V
V
CE(sat)
V
GE
=
15 V
100 A
Tj =
Tj =
25 C
125 C
2.15
2.3
2.6
V
Ic =
Input capacitance
Cies
V
GE
=
VCE =
f =
0 V
10000
Output capacitance
Reverse transfer capacitance
Coes
Cres
10 V
1 MHz
1600
1100
pF
1.2
ton
Vcc =
300 V
0.45
Turn-on time
tr
tr
(i)
toff
Ic =
V
GE
=
R
G
=
100 A
+-15 V
0.25
0.08
0.6
1.0
us
Turn-off time
24 ohm
0.40
tf
0.05
1.95
0.35
2.7
Forward on voltage
V
F
I
F
=
100 A
Tj =
25 C
V
Tj =
125 C
1.8
0.3
Reverse recovery time
trr
IF =
100 A
us
5. Thermal resistance characteristics
Characteristics
min.
typ.
Items
Symbols
Conditions
Max.
0.31
Units
Thermal resistance
R
th(j-c)
IGBT
(1 device)
FWD
with Thermal Compound
(*)
0.05
0.70
C/W
Contact Thermal resistance
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
R
th(c-f)
4
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