參數(shù)資料
型號: 6MBI10S-120L
廠商: FUJI ELECTRIC CO LTD
元件分類: IGBT 晶體管
英文描述: IGBT MODULE(1200V 6x10A)
中文描述: 15 A, 1200 V, N-CHANNEL IGBT
封裝: M624, 17 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 88K
代理商: 6MBI10S-120L
6MBI 10S-120L
6-Pack IGBT
1200V
6x10A
IGBT MODULE ( S-Series )
I
Features
NPT-Technologie
Solderable Package
Square SC SOA at 10 x I
C
High Short Circuit Withstand-Capability
Small Temperature Dependence of the Turn-Off
Switching Loss
Low Losses And Soft Switching
I
Applications
High Power Switching
A.C. Motor Controls
D.C. Motor Controls
Uninterruptible Power Supply
I
Outline Drawing
I
Maximum Ratings and Characteristics
I
Equivalent Circuit
Absolute Maximum Ratings
( T
c
=25°C
)
Items
Collector-Emitter Voltage
Gate -Emitter Voltage
Symbols
V
CES
V
GES
I
C
I
C PULSE
-I
C
-I
C PULSE
P
C
T
j
T
stg
V
is
Mounting *1
Note:
*1:Recommendable Value; 2.5
3.5 Nm (M5)
Ratings
1200
±
20
15 / 10
30 / 20
15 / 10
30 / 20
100
+150
-40
+125
2500
3.5
Units
V
V
Continuous
1ms
Continuous
1ms
Collector
Current (25°C / 80°C)
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
Screw Torque
W
°C
°C
V
Nm
A.C. 1min.
Electrical Characteristics
( at T
j
=25°C )
Items
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input capacitance
Output capacitance
Reverse Transfer capacitance
Symbols
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
ON
t
r
t
OFF
t
f
V
F
t
rr
Test Conditions
V
GE
=0V V
CE
=1200V
V
CE
=0V V
GE
=
±
20V
V
GE
=20V I
C
=10mA
V
GE
=15V I
C
=10A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=10A
V
GE
=
±
15V
R
G
=120
I
F
=10A V
GE
=0V
I
F
=10A
Min.
Typ.
Max.
1.0
200
9.0
Units
mA
μ
A
V
V
6.0
2.1
1200
pF
0.60
0.40
0.45
0.10
1.2
0.6
1.0
0.3
3.3
350
Diode Forward On-Voltage
Reverse Recovery Time
V
ns
Thermal Characteristics
Items
Symbols
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Min.
Typ.
Max.
1.25
2.00
Units
IGBT
Diode
With Thermal Compound
Thermal Resistance
°C/W
0.05
Turn-on Time
Turn-off Time
μ
s
A
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