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參數(shù)資料
| 型號(hào)： | 6CUT04FN |
| 廠(chǎng)商： | VISHAY INTERTECHNOLOGY INC |
| 元件分類(lèi)： | 整流器 |
| 英文描述： | 45 V, SILICON, RECTIFIER DIODE, TO-251AA |
| 封裝： | ROHS COMPLIANT, IPAK-3 |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | 6CUT04FN |
www.vishay.com
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94650
4
Revision: 10-Dec-08
6CUT04, 6CWT04FN
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 3 A
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
AverageForwardCurrent-IF
(AV)(A)
Allowable
Case
Temperature
(°C)
0
1
2
3
4
5
145
150
155
160
165
170
175
180
DC
Square wave (D=0.50)
80% rated Vr applied
see note (1)
AverageForwardCurrent-IF
(AV) (A)
Average
Power
Loss
-(Watts)
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
0.5
1
1.5
2
2.5
d=1/2
d=1/3
DC
RMS Limit
d=1/4
d=1/5
d=3/4
SquareWavePulseDuration-t
p (microsec)
Non-Repetitive
Surge
Current
-I
FSM
(A)
10
100
1000
10000
10
100
1000
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| 6CWT04FNTR | 45 V, SILICON, RECTIFIER DIODE, TO-252AA |
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| 6CUT10-E | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-251AA |
| 6CWT10FNTR-E | 3 A, 100 V, SILICON, RECTIFIER DIODE, TO-252AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 6CUT10-E | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:High Performance Schottky Generation 5.0, 2 x 3 A |
| 6CUT10-E_12 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:High Performance Schottky Generation 5.0, 2 x 3 A |
| 6CV855-02(L) | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 6CW5 | 制造商:GEC 制造商全稱(chēng):GEC 功能描述:POWER-AMPLIFIER PENTODE |
| 6CWF10 | 制造商:NJSEMI 制造商全稱(chēng):New Jersey Semi-Conductor Products, Inc. 功能描述:Rectifiers Ultra-Fast Recovery |
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