參數(shù)資料
型號(hào)： 4AM17
廠商： Hitachi,Ltd.
英文描述： Silicon N/P Channel MOS FET High Speed Power Switching
中文描述： 硅N / P系列溝道MOS FET高速電源開關(guān)
文件頁數(shù)： 5/7頁
文件大小： 39K
代理商： 4AM17
4AM17
5
Main Characteristics
6
5
4
3
2
1
0
Collector
Power
Dissipation
Pc
(W)
50
100
150
125
Ambient Temperature
Tc (°C)
75
25
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is is idetical
Condition : Channel dissipation of
Maximum Channel Dissipation Curve
60
20
10
0
Collector
Power
Dissipation
Pc
(W)
50
100
150
125
Case Temperature
Tc (°C)
75
25
4 Device Operation
3 Device Operation
2 Device Operation
1 Device Operation
each die is is idetical
Condition : Channel dissipation of
Maximum Channel Dissipation Curve
50
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
(N–channel)
10
1
0.1
0.05
0.1
0.3
1
3
10
30
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
10
s
Ta = 25 °C
1 ms
DC
Operation
(Tc
=
25
°C)
20
2
0.2
0.5
5
–50
Drain to Source Voltage
V
(V)
DS
Drain
Current
I
(A)
D
Maximum Safe Operation Area
(P–channel)
–10
–1
–0.1
–0.05
–0.1 –0.3
–1
–3
–10
–30
–100
100
s
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
10
s
Ta = 25 °C
1 ms
DC
Operation
(Tc
=
25
°C)
–20
–2
–0.2
–0.5
–5
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