參數資料
型號： 4AM17
廠商： Hitachi,Ltd.
英文描述： Silicon N/P Channel MOS FET High Speed Power Switching
中文描述： 硅N / P系列溝道MOS FET高速電源開關
文件頁數： 4/7頁
文件大?。?/td> 39K
代理商： 4AM17
4AM17
4
( P Channel )
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10 mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current
I
DSS
—
–250
AV
DS = –50 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.5
V
DS = –10 V, I D = –1 mA
Static drain to source on state
R
DS(on)
—
0.15
0.2
I
D = –4 A, VGS = –10 V
Note3
resistance
R
DS(on)
—
0.2
0.27
I
D = –4 A, VGS = –4 V
Note3
Forward transfer admittance
|y
fs|
3.5
6.0
—
S
I
D = –4 A, VDS = –10 V
Note3
Input capacitance
Ciss
—
17
—
pF
V
DS = –10 V
Output capacitance
Coss
—
460
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
1.2
—
pF
f = 1 MHz
Gate series resistance
Rg
—
3.2
—
k
V
DS = 0, VGS = 0 f = 1 MHz
Turn-on delay time
t
d(on)
—
0.6
—
ns
V
GS = –10 V, ID = –4 A
Rise time
t
r
—
2.1
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—12
—
ns
Fall time
t
f
—
5.8
—
ns
Body–drain diode forward voltage
V
DF
—
–1.2
—
V
I
F = –8 A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
2.5
—
ns
I
F = –8 A, VGS = 0
diF/ dt = 50 A/
s
Note:
3.
Pulse test
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