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參數(shù)資料
| 型號(hào)： | 4AE11 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN/PNP Triple Diffused(三倍擴(kuò)散NPN/PNP晶體管) |
| 中文描述： | 硅npn型/進(jìn)步黨三漫射（三倍擴(kuò)散npn型/進(jìn)步黨晶體管） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 4AE11 |
4AE11
3
0
Case Temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
50
100
150
20
60
40
4 device operation
3 device operation
2 device operation
1 device operation
Note: Collector power dissipation of each devices
is identical.
Collector to emitter voltage VCE (V)
Collector
current
I
C
(mA)
0
Typical Output Characteristics (NPN)
12345
100
200
300
400
500
TC = 25°C
IB = 0
10
A
20
30
40
50
60
70
80
100
90
10
20
50
100
200
500
1,000
2,000
5,000
10,000
Collector current IC (mA)
DC
current
transfer
ratio
h
FE
1
2
5
10 20
50 100 200 500 1,000
DC Current Transfer Ratio
vs. Collector Current (NPN)
T C
=
75
°C
–25
°C
25
°C
VCE= 1.5 V
Pulse
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