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參數(shù)資料
| 型號(hào)： | 4AE11 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN/PNP Triple Diffused(三倍擴(kuò)散NPN/PNP晶體管) |
| 中文描述： | 硅npn型/進(jìn)步黨三漫射（三倍擴(kuò)散npn型/進(jìn)步黨晶體管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 51K |
| 代理商： | 4AE11 |
4AE11
2
Absolute Maximum Ratings (for each device, Ta = 25°C)
Ratings
Item
Symbol
NPN
PNP
Unit
Collector to base voltage
V
CBO
300
–300
V
Collector to emitter voltage
V
CEO
300
–300
V
Emitter to base voltage
V
EBO
7–7
V
Collector current
I
C
0.3
–0.3
A
Collector peak current
I
C(peak)
0.6
–0.6
A
Collector power dissipation
P
C*
1
32
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to 150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
300
—
V
I
C = 1 mA, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
300
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
7—
—
V
I
E = 1 mA, IC = 0
Collector cutoff current
I
CBO
—
10
A
V
CB = 300 V, IE = 0
I
CEO
——
10
V
CE = 60 V, RBE = ∞
Emitter cutoff current
I
EBO
—
10
A
V
EB = 5 V, IC = 0
DC current transfer ratio
h
FE1
1000
—
V
CE = 1.5 V, IC = 20 mA*
1
h
FE2
3000
—
30000
V
CE = 1.5 V, IC = 100 mA*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.5
V
I
C = 100 mA, IB = 0.2 mA*
1
Base to emitter saturation
voltage
V
BE(sat)
—
2.0
V
I
C = 100 mA, IB = 0.2 mA*
1
Notes: 1. Pulse test.
2. The minus sign of PNP is omitted.
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