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參數(shù)資料
| 型號(hào)： | 4AC14 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Triple Diffused |
| 中文描述： | 硅npn型三重?cái)U(kuò)散 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 49K |
| 代理商： | 4AC14 |
4AC14
3
0
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
50
100
150
2
6
4
4 device operation
3 device operation
2 device operation
1 device operation
Ambient temperature Ta (
°C)
Note: Collector power dissipation of each devices
is identical.
0
Case temperature TC (°C)
Collector
power
dissipation
Pc
(W)
Maximum Collector Dissipation Curve
50
100
150
10
30
20
4 device operation
3 device operation
2 device operation
1 device operation
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
0.01
0.1
1.0
100
10
0.3
1.0
3.0
10
30
100
300
Area of Safe Operation
iC (peak)
IC (max)
1
ms
DC
Operation
(T
C
=
25
°C)
PW
=
10
ms
Ta = 25
°C
1 shot pulse
Collector to emitter voltage VCE (V)
Collector
current
I
C
(A)
0
Typical Output Characteristics
12345
1
2
3
4
5
TC = 25°C
IB = 0
1 mA
1.5
2
2.5
3.5
4.5
3
4
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