參數(shù)資料
型號(hào)： 48SD6404RPFH
廠商： MAXWELL TECHNOLOGIES
元件分類(lèi)： DRAM
英文描述： 1500PF 100V 5% MONOLITH CERM CAP
中文描述： 64M X 4 SYNCHRONOUS DRAM, 6 ns, DFP72
封裝： DFP-72
文件頁(yè)數(shù)： 23/42頁(yè)
文件大?。?/td> 596K
代理商： 48SD6404RPFH
48SD6404
M
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
‘
TABLE 1. ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
MAX
UNIT
Voltage on any pin relative to V
SS
V
IN
V
OUT
-0.5 to V
CC + 0.5
(< 4.6(max))
V
Supply voltage relative to V
SS
V
CC
-0.5 to +4.6
V
Short circuit output current
I
OUT
50
mA
Power Dissipation
P
D
1.0
W
Thermal resistance
Tjc
1.5
°C/W
Operating Temperature
T
OPR
-55 to +125
°C
Storage Temperature
T
STG
-65 to +150
°C
TABLE 2. RECOMMENDED OPERATING CONDITIONS
(V
CC = 3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125° C, UNLESS OTHERWISE SPECIFIED)
TABLE 3. DELTA LIMITS
PARAMETER
DESCRIPTION
VARIATION1
1. ±10% of value specified in Table 4
I
CC1
Operating Current
±10%
I
CC2P ICC2PS ICC2N ICC2NS
Standby Current
±10%
I
CC3P ICC3PS ICC3N ICC3NS
Active Standby Current
±10%
TABLE 4. DC ELECTRICAL CHARACTERISTICS
(V
CC = 3.3V + 0.3V, VCCQ = 3.3V + 0.3V, TA = -55 TO 125° C, UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
TEST CONDITIONS
SUBGROUPS
MIN
MAX
UNITS
Operating Current1,2,3
I
CC1
Burst length
= 1
t
RC = min
CAS Latency = 2
1, 2, 3
115
mA
CAS Latency = 3
115
Standby Current in Power Down4
I
CC2P
CKE = V
IL
t
CK = 12 ns
1, 2, 3
3
mA
PARAMETER
SYMBOL
MIN
MAX
UNIT
Supply Voltage
VCC, VCCQ1,2
3.0
3.6
V
VSS, VSSQ3
0
V
Input High Voltage
VIH1,4
2.0
VCC + 0.3
V
Input Low Voltage
VIL1,5
-0.3
0.8
V
1.
All voltage referred to VSS
2.
The supply voltage with all
VCC and VCCQ pins must be on the same level
3.
The supply voltage with all VSS and VSSQ pins must be on the same level
4.
VIH (max) = VDD+2.0V for pulse width
<3ns at VCC
5.
VIL (min) = VSS-2.0V for pulse width
<3ns at VSS
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