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參數(shù)資料
| 型號(hào)： | 48SD6404RPFH |
| 廠商： | MAXWELL TECHNOLOGIES |
| 元件分類： | DRAM |
| 英文描述： | 1500PF 100V 5% MONOLITH CERM CAP |
| 中文描述： | 64M X 4 SYNCHRONOUS DRAM, 6 ns, DFP72 |
| 封裝： | DFP-72 |
| 文件頁數(shù)： | 20/42頁 |
| 文件大?。?/td> | 596K |
| 代理商： | 48SD6404RPFH |
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48SD6404
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All data sheets are subject to change without notice
2005 Maxwell Technologies
All rights reserved.
256Mb (16-Meg X 4-Bit X 4-Banks) SDRAM
01.11.05 Rev 2
Read command to Write command Interval:
1. Same bank, same ROW address: When the write command is executed at the same ROW address of
the same bank as the preceding read command, the write command can be performed after an interval of no
less than 1 clock. However, DQM must be set High so the output buffer becomes High-Z before data input.
READ to WRITE Command Interval (1)
READ to WRITE Command Interval (2)
2. Same bank, different ROW address: When the ROW address changes, consecutive write commands
cannot be executed; it is necessary to separate the two commands with a precharge command and a bank-
active command.
3. Different bank: When the bank changes, the write command can be performed after an interval of no
less than 1 cycle, provided that the other bank is in the bank-active state. However, DQM must be set High
so that the output buffer becomes High-Z before data input.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 48SD6404RPFI | 256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SD6404RPFK | 256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SD6404 | CAP 2.2UF 50V CERAMIC MONO 20% |
| 48TQFP | 48 PIN TQFP/TQN PACKAGE OUTLINE |
| 4900 | Dual Winding Surface Mount Inductors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 48SD6404RPFI | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SD6404RPFK | 制造商:MAXWELL 制造商全稱:Maxwell Technologies 功能描述:256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks |
| 48SFK0001 | 制造商:MADISON CABLE / TYC 功能描述: |
| 48SFKLF001 | 制造商:MADISON CABLE / TYC 功能描述: |
| 48SING-N5-25WH | 制造商:Edwards Signaling & Security Systems 功能描述:STDY_GRN_120AC |
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