參數(shù)資料
型號: 45MT160P
廠商: International Rectifier
英文描述: THREE PHASE CONTROLLED BRIDGE
中文描述: 三相控橋
文件頁數(shù): 3/7頁
文件大?。?/td> 120K
代理商: 45MT160P
45MT160P
3
Bulletin I27600 rev. C 11/00
Triggering
P
GM
Max. peak gate power
10
W
T
J = TJ max.
P
G(AV) Max. average gate power
2.5
I
GM
Max. peak gate current
2.5
A
-V
GT
Max. peak negative gate voltage
10
V
GT
Max. required DC gate
4.0
V
TJ = - 40°C
voltage to trigger
2.5
TJ = 25°C
Anode supply = 6V, resistive load
1.7
TJ = TJ max.
I
GT
Max. required DC gate
270
TJ = - 40°C
current to trigger
150
mA
TJ = 25°C
Anode supply = 6V, resistive load
80
TJ = TJ max.
V
GD
Max. gate voltage
0.25
V
@ T
J = TJ max., rated VDRM applied
that will not trigger
I
GD
Max. gate current
6
mA
that will not trigger
Thermal and Mechanical Specifications
T
J
Maximum junction operating
- 40 to 125
°C
for diodes
temperature range
- 40 to 100
for Scr
T
stg
Maximum storage temperature
-40 to 150
°C
range
RthJC Maximum thermal resistance,
0.32
K/W
DC operation per module
junction to case
1.9
DC operation per junction
0.4
120° Rect condunction angle per module
2.42
120° Rect condunction angle per junction
RthCS Maximum thermal resistance,
0.1
K/W
Per module
case to heatsink
Mounting surface smooth, flat an greased
T
Mounting torque ± 10%
4
N m
to heatsink
wt
Approximate weight
60
g
A mounting compound is recommended and the
torque should be rechecked after a period of 3
hours to allow for the spread of the compound.
Lubricatedthreads.
Parameter
45MT160P
Units Conditions
Parameter
45MT160P
Units Conditions
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC when device operate at different conduction angles than DC)
Sinusoidal conduction @ TJ max.
Rectangular conduction @ TJ max.
Device
Units
180o
120o
90o
60o
30o
180o
120o
90o
60o
30o
45MT160P
0.469
0.55
0.69
1.005
1.87
0.289
0.521
0.72
1.065
1.891
K/W
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