參數(shù)資料
型號(hào)： 45MT160P
廠商： International Rectifier
英文描述： THREE PHASE CONTROLLED BRIDGE
中文描述： 三相控橋
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 120K
代理商： 45MT160P
45MT160P
2
Bulletin I27600 rev. C 11/00
I
O
Maximum DC output current
40 (36)
A
120° Rect conduction angle
@ Case temperature
78 (85)
°C
I
TSM
Maximum peak, one-cycle
390
A
t = 10ms
No voltage
forward, non-repetitive
410
t = 8.3ms reapplied
on state surge current
330
t = 10ms
100% V
RRM
345
t = 8.3ms reapplied
Initial
I2t
Maximum I2t for fusing
770
A2s
t = 10ms
No voltage
T
J = TJ max.
700
t = 8.3ms reapplied
540
t = 10ms
100% V
RRM
500
t = 8.3ms reapplied
I2
√t
Maximum I2
√t for fusing
7700
A2
√s t = 0.1 to 10ms, no voltage reapplied
VT(TO) Value of threshold voltage
0.98
V
@ T
J max.
rt
Low level value on-state
11
m
V
TM
Maximum on-state voltage drop
1.33
V
Ipk = 30A, T
J = 25°C
tp = 400s single junction
di/dt
Maximum non-repetitive rate
150
A/s
TJ = 25oC, from 0.67 VDRM, I
TM = π x IT(AV),
of rise of turned on current
Ig = 500mA, tr < 0.5 s, tp > 6 s
I
H
Maximum Holding Current
200
mA
T
J = 25
o
C, anode supply = 6V,
resistive load, gate open circuit
IL
Maximum Latching Current
400
TJ = 25oC, anode supply = 6V, resistive load
Forward Conduction
V
INS
RMS isolation voltage
4000
V
T
J = 25
o
C all terminal shorted
f = 50Hz, t = 1s
dv/dt Max. critical rate of rise
1000
V/s
T
J = TJ max., linear to 0.67 VDRM,
of off-state voltage
gate open circuit
Blocking
Voltage
V
RRM, maximum
V
RSM, maximum
V
DRM, max. repetitive
I
RRM/IDRMmax.
Typenumber
Code
repetitive peak
non-repetitive peak
peak off-state voltage
@ T
J = TJ max.
reversevoltage
gate open circuit
VV
V
mA
45MT160P
160
1600
1700
1600
15
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter
45MT160P
Units Conditions
Parameter
45MT160P
Units Conditions
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