參數(shù)資料
型號(hào): 3256E
廠商: Lattice Semiconductor Corporation
英文描述: In-System Programmable High Density PLD
中文描述: 在系統(tǒng)可編程高密度可編程邏輯器件
文件頁數(shù): 4/15頁
文件大?。?/td> 159K
代理商: 3256E
Specifications
ispLSI 3256E
4
Absolute Maximum Ratings
1
Supply Voltage V
cc
...........................................................................-0.5 to +7.0V
Input Voltage Applied........................................................................-2.5 to V
CC
+1.0V
Off-State Output Voltage Applied .....................................................-2.5 to V
CC
+1.0V
Storage Temperature........................................................................-65 to 150
°
C
Case Temp. with Power Applied ......................................................-55 to 125
°
C
Max. Junction Temp. (T
J
) with Power Applied (304-Pin PQFP) ......150
°
C
Max. Junction Temp. (T
J
) with Power Applied (320-Ball BGA) ........140
°
C
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
DC Recommended Operating Condition
Capacitance (T
A
=25
°
C,f=1.0 MHz)
SYMBOL
Table 2-0006/3256E
C
PARAMETER
Clock Capacitance
15
UNITS
pf
TYPICAL
10
TEST CONDITIONS
V = 5.0V, V = 2.0V
2
pf
V = 5.0V, V = 2.0V
C
I/O Capacitance
1
Data Retention Specifications
Table 2-0008/3256E
PARAMETER
Data Retention
ispLSI Erase/Reprogram Cycles
MINIMUM
20
10000
MAXIMUM
UNITS
Years
Cycles
T
A
V
CC
V
IL
SYMBOL
Table 2-0005/3256E
V
IH
PARAMETER
Ambient Temperature
Supply Voltage
Input Low Voltage
Input High Voltage
MIN.
0
4.75
0
MAX.
70
5.25
0.8
UNITS
°
C
V
V
2.0
V +1
V
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