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參數(shù)資料
| 型號(hào)： | 3197 |
| 廠商： | Allegro MicroSystems, Inc. |
| 英文描述： | Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(保護(hù)型，工作于高溫，集電極開路霍爾效應(yīng)鎖存器) |
| 中文描述： | 保護(hù)，高溫，霍爾效應(yīng)與主動(dòng)下拉（保護(hù)型，工作于高溫，集電極開路霍爾效應(yīng)鎖存器鎖存） |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | 3197 |
3197
PROTECTED, HIGH-TEMP.,
OPEN-COLLECTOR
HALL-EFFECT LATCH
www.allegromicro.com
26 V
MAX
0
+B
0
O
FLUX DENSITY
Dwg. GH-034-2A
-B
RP
B
V
OUT(SAT)
BB
V
OP
B
OPERATION
In operation, the output transistor is OFF
until the strength of the magnetic field
perpendicular to the surface of the chip
exceeds the threshold or operate point (B
OP
).
When the field strength exceeds B
OP
, the
output transistor switches ON
(a logic low) and is capable of sinking
35 mA of current.
The output transistor switches OFF (a
logic high) when magnetic field reversal
results in a magnetic flux density below the
OFF threshold (B
RP
). This is illustrated in
the transfer characteristics graph. Note that
the device latches; that is, a south pole of
sufficient strength will turn the device ON.
Removal of the south pole will leave the
device ON. The presence of a north pole of
sufficient strength is required to turn the
device OFF.
The switch points increase in sensitivity
with increasing temperature to compensate
for the typical ferrite magnet temperature
characteristic. The simplest form of magnet
that will operate these devices is a ring
magnet. Other methods of operation are
possible.
TEST CIRCUIT AND TYPICAL APPLICATION
TO
μ
P
3
X
Dwg. EH-006A
V
CC(UV)
TO 26 V
WITH TRANSIENTS
L
R
L
C
REGULATED
< 26 V
V
BB
V
CC
BYPASS
C
2
1
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