參數(shù)資料
型號(hào)： 2SK741
廠商： Hitachi,Ltd.
英文描述： Silicon N-Channel MOS FET
中文描述： 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 39K
代理商： 2SK741
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
250
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
2.0
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
2.7
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn-on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn-off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body to drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
* Pulse Test
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= 10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
—
250
μA
V
DS
= 200 V, V
GS
= 0
—
4.0
V
I
D
= 1 mA, V
DS
= 10 V
0.40
0.55
I
D
= 4 A, V
GS
= 10 V *
4.5
—
S
I
D
= 4 A, V
DS
= 10 V *
820
—
pF
V
DS
= 10 V, V
GS
= 0,
370
—
pF
f = 1 MHz
115
—
pF
12
—
ns
I
D
= 4 A, V
GS
= 10 V,
48
—
ns
R
L
= 7.5
70
—
ns
50
—
ns
1.2
—
V
I
F
= 7 A, V
GS
= 0
400
—
ns
I
F
= 7 A, V
GS
= 0,
di
F
/dt = 50 A/μs
2SK741
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