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參數(shù)資料
| 型號(hào)： | 2SK660 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場(chǎng)效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK660 |
Data Sheet D10753EJ2V0DS
3
2SK660
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
300
400
500
V
DS
- Drain to Source Voltage - V
I
D
100
0
10
0
2
4
6
8
μ
0.05 V
0.15 V
0.10 V
0.05 V
0.10 V
0.15 V
0.20 V
0.30 V
V
GS
= 0 V
0.25 V
V
GS
- Gate to Source Voltage - V
I
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
40
μ
0
10
20
30
30
40
20
10
0.2
0.4
0.6
0.8
1.0
1.0
0.8
0.6
0.4
0.2
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
I
D
0.4
0.2
0
0.2
0.4
0.2
0.6
0.4
0.8
1.0
V
DS
= 5 V
INPUT AND FEEDBACK CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
10
20
50
100
V
DS
- Drain to Source Voltage - V
C
i
,
O
3
5
8
10
1
2
1
5
2
C
ISS
C
OSS
V
= 0 V
f = 1.0 kHz
T
A
- Ambient Temperature - C
P
T
-
0
30
60
90
150
120
180
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
FORWARD TRANSFER ADMITTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage -
V
|
f
|
3.0
2.5
2.0
1.5
1.0
0.5
0
0.4
0.2
0.3
0.1
0
0.2
0.4
0.1
0.3
V
DS
= 5 V
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PDF描述 |
|---|---|
| 2SK669 | Aluminum Polymer Radial Lead Capacitor; Capacitance: 560uF; Voltage: 10V; Case Size: 8x9 mm; Packaging: Bulk |
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| 2SK679A | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK662 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR 2SK662-R |
| 2SK662-R | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK663 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Low-Frequency Amplification |
| 2SK664 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Switching |
| 2SK665 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
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