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參數(shù)資料
| 型號(hào)： | 2SK660 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場(chǎng)效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | 2SK660 |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK660
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D10753EJ2V0DS00 (2nd edition)
Date Published January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK660 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
| y
fs
| =
1200
μ
S TYP. (V
DS
= 5 V, I
D
= 0
μ
A)
Low capacitance
C
iss
= 4.5 pF (V
DS
= 5 V, V
GS
= 0 V, f = 1 MHz)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK660
SST
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
Note
V
DSX
20
V
Gate to Drain Voltage
V
GDO
–20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°C
Storage Temperature
T
stg
–55 to +125
°C
Note
V
GS
= –1.0 V
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
EQUIVALENT CIRCUIT
Source
Gate
Drain
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