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參數(shù)資料
| 型號(hào)： | 2SK601 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 35K |
| 代理商： | 2SK601 |
1
Silicon MOS FETs (Small Signal)
2SK601
Silicon N-Channel MOS FET
unit: mm
For switching
I
Features
G
Low ON-resistance R
DS(on)
G
High-speed switching
G
Allowing to be driven directly by CMOS and TTL
G
Mini-power type package, allowing downsizing of the sets and
automatic insertion through the tape/magazine packing.
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D*
T
ch
T
stg
Ratings
80
20
±0.5
±1
1
150
55 to +150
Unit
V
V
A
A
W
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)*1
| Y
fs
|
C
iss
C
oss
C
rss
t
on*2
t
off*2
Conditions
V
DS
= 60V, V
GS
= 0
V
GS
= 20V, V
DS
= 0
I
DS
= 100
μ
A, V
GS
= 0
I
D
= 1mA, V
DS
= V
GS
I
D
= 0.5A, V
GS
= 10V
I
D
= 0.2A, V
DS
= 15V, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
*1
Pulse measurement
*2
t
on
, t
off
measurement circuit
min
80
1.5
typ
2
300
45
30
8
15
20
Unit
μ
A
μ
A
V
V
mS
pF
pF
pF
ns
ns
1: Gate
2: Drain
3: Source
EIAJ: SC-62
Mini-Power Type Package (3-pin)
Marking Symbol: O
max
10
0.1
3.5
4
*
PC board: Copper foil of the drain portion should have a area of 1cm
2
or
more and the board thickness should be 1.7mm.
4.5±0.1
1.6±0.2
2
2
0
1
+
–
4
+
–
3.0±0.15
1.5±0.1
0.4±0.08
0.5±0.08
1.5±0.1
0.4±0.04
45
marking
3
2
1
V
in
= 10V
t
= 1
μ
S
f
= 1MH
Z
50
68
t
on
t
off
V
in
10%
90%
10%
90%
V
out
V
in
V
out
V
DD
= 30V
V
out
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