參數(shù)資料
型號: 2SK655
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: For Switching
中文描述: 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: SC-72, 3 PIN
文件頁數(shù): 1/3頁
文件大?。?/td> 76K
代理商: 2SK655
283
Silicon MOS FETs (Small Signal)
2SK0655
(2SK655)
Silicon N-Channel MOS FET
For switching
I
Features
G
High-speed switching
G
Allowing to supply with the radial taping
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GSO
I
D
I
DP
P
D
T
ch
T
stg
Ratings
50
8
100
200
200
150
55 to +150
Unit
V
V
mA
mA
mW
°C
°C
I
Electrical Characteristics
(Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
C
iss
C
oss
C
rss
t
on*
t
off*
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
= 8V, V
DS
= 0
I
D
= 100
μ
A, V
GS
= 0
I
D
= 100
μ
A, V
DS
= V
GS
I
D
= 20mA, V
GS
= 5V
I
D
= 20mA, V
DS
= 5V, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DD
= 5V, V
GS
= 0 to 5V, R
L
= 200
V
DD
= 5V, V
GS
= 5 to 0V, R
L
= 200
*
t
on
, t
off
measurement circuit
min
50
1.5
20
typ
35
10
4
0.5
10
20
Unit
μ
A
μ
A
V
V
mS
pF
pF
pF
ns
ns
max
10
50
3.5
50
15
5
1
V
out
V
DD
= 5V
V
GS
= 5V
50
200
1
μ
F
V
in
90%
10%
10%
90%
V
out
t
on
t
off
Internal Connection
G
D
S
1: Source
2: Drain
3: Gate
NS-B1 Package
4.0
±0.2
0.75 max.
2.0
±0.2
0.45
(2.5) (2.5)
0.7
±0.1
2
3
1
+0.20
0.45
+0.20
7
3
±
(
(
1
±
unit: mm
Note) The part number in the parenthesis shows conventional part number.
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