參數(shù)資料
型號: 2SK3761
廠商: Toshiba Corporation
英文描述: TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS?)
中文描述: 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型(餅馬鞍山?)
文件頁數(shù): 2/6頁
文件大?。?/td> 89K
代理商: 2SK3761
2SK3761
2004-02-26
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
=
±
25 V, V
DS
=
0 V
±
10
μ
A
Gate-source breakdown voltage
V
(BR) GSS
I
D
=
±
10
μ
A, V
GS
=
0 V
±
30
V
Drain cut-off current
I
DSS
V
DS
=
600 V, V
GS
=
0 V
100
μ
A
Drain-source breakdown voltage
V
(BR) DSS
I
D
=
10 mA, V
GS
=
0 V
600
V
Gate threshold voltage
V
th
V
DS
=
10 V, I
D
=
1 mA
2.0
4.0
V
Drain-source ON resistance
R
DS (ON)
V
GS
=
10 V, I
D
=
3 A
0.9
1.25
Forward transfer admittance
Y
fs
V
DS
=
10 V, I
D
=
3 A
1.2
5.0
S
Input capacitance
C
iss
1050
Reverse transfer capacitance
C
rss
10
Output capacitance
C
oss
V
DS
=
25 V, V
GS
=
0 V, f
=
1 MHz
110
pF
Rise time
t
r
20
Turn-on time
t
on
40
Fall time
t
f
35
Switching time
Turn-off time
t
off
130
ns
Total gate charge
Q
g
28
Gate-source charge
Q
gs
16
Gate-drain charge
Q
gd
V
DD
400 V, V
GS
=
10 V, I
D
=
6 A
12
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
6
A
Pulse drain reverse current
(Note 1)
I
DRP
24
A
Forward voltage (diode)
V
DSF
I
DR
= 6
A, V
GS
=
0 V
1.7
V
Reverse recovery time
t
rr
1000
ns
Reverse recovery charge
Q
rr
I
DR
=
6 A, V
GS
=
0 V,
dI
DR
/dt
=
100 A/
μ
s
7
μ
C
Marking
R
L
=
66
0 V
10
V
V
GS
V
DD
200 V
I
D
=
3
A
V
OUT
50
Duty
<
1%, t
w
=
10
μ
s
TYPE
K3761
Lot Number
Date
Month (Starting from Alphabet A)
Year (Last Number of the Christian Era)
相關(guān)PDF資料
PDF描述
2SK3767 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
2SK3771-01MR N-CHANNEL SILICON POWER MOSFET
2SK3772-01 N-CHANNEL SILICON POWER MOSFET
2SK3773-01MR N-CHANNEL SILICON POWER MOSFET
2SK3775-01 N-CHANNEL SILICON POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3761(M) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 6A 3PIN TO-220AB - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO-220AB
2SK3761(Q,M) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO-220AB
2SK3762 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 900V TO-220AB
2SK3762(M) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 2.5A 3PIN TO-220AB - Rail/Tube
2SK3762(Q,M) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 2.5A TO-220AB