參數(shù)資料
型號(hào)： 2SK369V
英文描述： Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述： 晶體管|場效應(yīng)| N溝道| 14MA我（直）|到92
文件頁數(shù)： 1/4頁
文件大?。?/td> 67K
代理商： 2SK369V
DATE
NAME
DRAWN
CHECKED
REVISIONS
APPROVED
D
Fuji Electric Co.,Ltd.
T
F
l
t
t
MA4LE
PRELIMINARY
1) Package
T-PACK
L
2) Absolute Maximum Ratings (Tc=25
Items
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
unless otherwise specified)
Symbols
Units
V
A
A
V
A
mJ
*1
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
dV
DS
/dt
dV/dt
P
D
kV/us
kV/us
W
W
*2
Operating and Storage
Temperature range
3)Electrical Characteristics (Tch=25
Items
Drain-Source Breakdown Voltage BV
DSS
Gate Threshold Voltage
unless otherwise specified)
Symbols
Test Conditions
I
D
=250uA
V
GS
(th)
I
D
=250uA
V
DS
=900V
V
GS
=0V
I
GSS
V
GS
=±30V
min.
900
3.0
---
---
---
typ.
---
---
---
---
---
max.
---
5.0
50
500
100
Units
V
V
V
GS
=0V
V
DS
=V
GS
T
ch
=25
T
ch
=125
V
DS
=0V
A
A
Gate-Source Leakage Current
nA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
C
iss
C
oss
C
rss
Qg
Qgs
Qgd
I
AV
V
SD
V
DS
=25V
V
GS
=0V
f=1MHz
Vcc=450V
I
D
=6A
V
GS
=10V
L=12.4mH
I
F
=6A,VGS=0V,Tch=25
---
---
---
---
---
---
6
---
830
100
5
25
7.5
7
---
1.0
---
---
---
---
---
---
---
1.5
pF
nC
Tch=25
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max.
0.64
75.0
Units
/W
/W
*1 L=12.4mH,Vcc=90V
F
≤
D
μ
≤
DSS
≤
°
Non-Repetitive
Maximum Avalanche Energy
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
T
ch
T
stg
Maximum Power Dissipation
P
D @Ta=25
c=25
---
I
DSS
R
DS
(on)
I
D
=3A
VGS=10V
---
2.5
244.0
20
5
195
1.67
150
-55
+150
Ratings
900
±6
±24
±30
2SK3676-01L,S,SJ (900V/2.5
/6A)
V
GS
I
AR
E
AS
V
DS
I
D
I
D(pulse)
6
相關(guān)PDF資料
PDF描述
2SK370BL TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK
2SK370GR Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK370V TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK
2SK371BL Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK371GR TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | SPAK
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK369-V(F) 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 30mA Si 3-Pin TO-92
2SK3700(F) 功能描述:MOSFET N-Ch 700V PWR FET ID 5A PD 150W 1150pF RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3702 功能描述:MOSFET N-CH 60V 18A TO-220ML RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3703 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3703-1E 功能描述:MOSFET NCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續(xù)電流:180 mA 電阻汲極/源極 RDS（導(dǎo)通）:4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*