- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369208 > 2SK369BL Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset PDF資料下載
參數(shù)資料
| 型號： | 2SK369BL |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應(yīng)| N溝道| 8mA的我（直）|到92 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SK369BL |
DATE
NAME
DRAWN
CHECKED
REVISIONS
APPROVED
D
Fuji Electric Co.,Ltd.
T
F
l
t
t
MA4LE
PRELIMINARY
1) Package
T-PACK
L
2) Absolute Maximum Ratings (Tc=25
Items
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
unless otherwise specified)
Symbols
Units
V
A
A
V
A
mJ
*1
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
dV
DS
/dt
dV/dt
P
D
kV/us
kV/us
W
W
*2
Operating and Storage
Temperature range
3)Electrical Characteristics (Tch=25
Items
Drain-Source Breakdown Voltage BV
DSS
Gate Threshold Voltage
unless otherwise specified)
Symbols
Test Conditions
I
D
=250uA
V
GS
(th)
I
D
=250uA
V
DS
=900V
V
GS
=0V
I
GSS
V
GS
=±30V
min.
900
3.0
---
---
---
typ.
---
---
---
---
---
max.
---
5.0
50
500
100
Units
V
V
V
GS
=0V
V
DS
=V
GS
T
ch
=25
T
ch
=125
V
DS
=0V
A
A
Gate-Source Leakage Current
nA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
C
iss
C
oss
C
rss
Qg
Qgs
Qgd
I
AV
V
SD
V
DS
=25V
V
GS
=0V
f=1MHz
Vcc=450V
I
D
=6A
V
GS
=10V
L=12.4mH
I
F
=6A,VGS=0V,Tch=25
---
---
---
---
---
---
6
---
830
100
5
25
7.5
7
---
1.0
---
---
---
---
---
---
---
1.5
pF
nC
Tch=25
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max.
0.64
75.0
Units
/W
/W
*1 L=12.4mH,Vcc=90V
F
≤
D
μ
≤
DSS
≤
°
Non-Repetitive
Maximum Avalanche Energy
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
T
ch
T
stg
Maximum Power Dissipation
P
D @Ta=25
c=25
---
I
DSS
R
DS
(on)
I
D
=3A
VGS=10V
---
2.5
244.0
20
5
195
1.67
150
-55
+150
Ratings
900
±6
±24
±30
2SK3676-01L,S,SJ (900V/2.5
/6A)
V
GS
I
AR
E
AS
V
DS
I
D
I
D(pulse)
6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK369GR | TRANSISTOR | JFET | N-CHANNEL | 5MA I(DSS) | TO-92 |
| 2SK369V | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK370BL | TRANSISTOR | JFET | N-CHANNEL | 6MA I(DSS) | SPAK |
| 2SK370GR | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK370V | TRANSISTOR | JFET | N-CHANNEL | 10MA I(DSS) | SPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK369-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK369GR | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK369-GR(F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 10mA 3-Pin TO-92 Bulk |
| 2SK369GR(TPE2,F) | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE N-CHANNEL JFET - Tape and Reel |
| 2SK369GRF | 功能描述:JFET Low Noise N-Ch VGDS -40V NF 1.0dB RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。