參數(shù)資料
型號(hào): 2SK3634-AZ
元件分類: 小信號(hào)晶體管
英文描述: 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
封裝: TO-251, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 117K
代理商: 2SK3634-AZ
Data Sheet D15936EJ3V0DS
4
2SK3634
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
ID
-
Drai
n
Current
-
A
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Pulsed
VGS = 10 V
ID
-
Drai
n
Current
-
A
0.0001
0.001
0.01
0.1
1
10
100
05
1 0
15
Pulse d
V DS = 10 V
T ch = 12 5
°C
75
°C
25
°C
25°C
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
Cut-off
Voltage
-
V
2
2.5
3
3.5
4
4.5
5
-50
-25
0
25
50
75
100
125
150
VSD = 10 V
ID = 1 mA
|
y
fs
|-
Forward
Transfer
Admittance
-
S
0.01
0.1
1
10
100
0.01
0.1
1
10
100
TA =
25°C
75°C
125°C
Pulsed
VDS = 10 V
Tch - Channel Temperature -
°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0.5
1
1.5
2
0.01
0.1
1
10
100
Pulsed
VGS = 10 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
2
4
6
8
10
121416
1820
Pulsed
ID = 6.0 A
3.0 A
1.5 A
R
DS(
on)
-
Drain
to
Source
On-state
Resistance
-
Ω
ID - Drain Current - A
R
DS(
on)
-
Drain
to
Source
On-state
Resistance
-
Ω
VGS - Gate to Source Voltage - V
相關(guān)PDF資料
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2SK3653 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3634-Z-AZ 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 6A 3-Pin(2+Tab) TO-252
2SK3635-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251
2SK3635-Z-AZ 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape
2SK363BL 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK363-BL(F) 制造商:Toshiba America Electronic Components 功能描述: