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參數(shù)資料
| 型號： | 2SK3634-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK3634-AZ |
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MOS FIELD EFFECT TRANSISTOR
2SK3634
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15936EJ3V0DS00 (3rd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2001
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK3634 is N-channel MOS FET device that features
a low on-state resistance and excellent switching
characteristics, and designed for high voltage applications
such as DC/DC converter.
FEATURES
High voltage: VDSS = 200 V
Gate voltage rating: ±30 V
RDS(on) = 0.60
Ω MAX. (VGS = 10 V, ID = 3.0 A)
Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V)
Built-in gate protection diode
TO-251/TO-252 package
Avalanche capability rated
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±6.0
A
Drain Current (Pulse)
Note1
ID(pulse)
±18
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Single Avalanche Current
Note2
IAS
6.0
A
Single Avalanche Energy
Note2
EAS
3.6
mJ
Repetitive Avalanche Current
Note3
IAR
6.0
A
Repetitive Pulse Avalanche Energy
Note3
EAR
2.0
mJ
Notes 1. PW
≤ 10
μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20
→ 0 V, L = 100
μH
3. Tch
≤ 125°C , RG = 25 Ω, VDD = 100 V
(TO-251)
(TO-252)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3634
TO-251 (MP-3)
2SK3634-Z
TO-252 (MP-3Z)
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| 2SK3653 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3653J2 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3653J3 | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3653J6-A | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3653J5-A | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3634-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 200V 6A 3-Pin(2+Tab) TO-252 |
| 2SK3635-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(3+Tab) TO-251 |
| 2SK3635-Z-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 200V 8A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK363BL | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK363-BL(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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