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參數(shù)資料
| 型號： | 2SK3576 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場效應(yīng)晶體管高速開關(guān) |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 2SK3576 |
Data Sheet D15939EJ1V0DS
5
2SK3576
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
30
40
50
60
70
80
90
0.01
0.1
1
10
100
V
GS
= 2.5 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
20
30
40
50
60
70
80
0.01
0.1
1
10
100
V
GS
= 4.0 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
R
D
I
D
- Drain Current - A
R
D
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
20
30
40
50
60
70
80
0.01
0.1
1
10
100
V
GS
= 4.5 V
Pulsed
T
A
= 125
°
C
75
°
C
25
°
C
25
°
C
I
D
- Drain Current - A
C
i
,
o
,
r
10
100
1000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
t
d
,
r
,
d
,
f
10
100
1000
0.1
1
10
V
DD
= 10 V
V
GS
= 4.0 V
R
G
= 10
t
d(off)
t
d(on)
t
r
t
f
I
S
0.01
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
Pulsed
V
GS
= 0 V
I
D
- Drain Current - A
V
SD
- Source to Drain Voltage - V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3577 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK359 | Silicon N-Channel MOS FET |
| 2SK360 | Silicon N-Channel MOS FET |
| 2SK3635-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3635 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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