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參數(shù)資料
| 型號(hào)： | 2SK3576 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SK3576 |
Data Sheet D15939EJ1V0DS
4
2SK3576
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
2.5 V
V
GS
= 4.5 V
Pulsed
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
0.00001
0.0001
0.001
0.01
0.1
1
10
100
0
1
2
3
V
DS
= 10 V
T
A
= 125
°
C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0.5
1
1.5
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
|
f
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
DS
= 10 V
T
A
= 125
°
C
75°C
25°C
25°C
T
ch
- Channel Temperature -
°
C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATERESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
30
40
50
60
70
80
90
100
-50
0
50
100
150
I
D
= 2.0 A
4.5 V
4.0 V
V
GS
= 2.5 V
20
30
40
50
60
70
80
90
100
0
2
4
6
8
10
12
I
D
= 2.0 A
R
D
T
ch
- Channel Temperature - °C
R
D
V
GS
- Gate to Source Voltage - V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3577 | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK359 | Silicon N-Channel MOS FET |
| 2SK360 | Silicon N-Channel MOS FET |
| 2SK3635-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3635 | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3576-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3576-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 20V 4A 3-Pin Thin-Type Mini-Mold T/R |
| 2SK3576-T1B-AT | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3577-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 3.5A 3-Pin SC-59 |
| 2SK358 | 制造商:Toshiba 功能描述:Bulk |
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