參數(shù)資料
型號(hào): 2SK3491
元件分類: 小信號(hào)晶體管
英文描述: 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: TP, 3 PIN
文件頁數(shù): 1/4頁
文件大小: 54K
代理商: 2SK3491
2SK3491
No.6959-1/4
www.semiconductor-sanyo.com/network
SANYO Semiconductors
DATA SHEET
30409PB MS IM / 52101 TS IM TA-3255
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
2SK3491
Features
Low ON-resistance.
Low Qg.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
600
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
1.0
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
4.0
A
Allowable Power Dissipation
PD
1.0
W
Tc=25°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
600
V
Zero-Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
100
μA
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.5
3.5
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.5A
430
850
mS
Static Drain-to-Source On-State Resistance
RDS(on)
VGS=10V, ID=0.5A
8.5
11
Ω
Input Capacitance
Ciss
VDS=20V, f=1MHz
135
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
40
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
20
pF
Marking : K3491
Continued on next page.
Ordering number : EN6959A
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相關(guān)PDF資料
PDF描述
2SK3491-TL 1000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3506 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3506 45 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3507-Z 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252
2SK3507 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3491-TL-E 制造商:SANYO 功能描述:Nch 600V 1A 0.011 so?e` Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 600V 1A TO-251 制造商:Sanyo 功能描述:0
2SK3491TP 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-251VAR
2SK3491TP-FA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1A I(D) | TO-252VAR
2SK3492 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N CHANNEL MOS SILICON TRANSISTORl
2SK3492-TL-E 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 8A TO-251