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參數(shù)資料
| 型號(hào)： | 2SK3507 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 22000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251 |
| 封裝： | TO-251, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK3507 |
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
D15387EJ1V0PM00 (1st edition)
Date Published
March 2001 NS CP(K)
Printed in Japan
PRELIMINARY PRODUCT INFORMATION
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance,
RDS(on)1 = 50 m
MAX. ( VGS = 10 V, ID = 11 A)
Low gate charge
QG = 8 nC TYP. ( VDD = 24 V, VGS = 10 V, ID = 22 A)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±16
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±22
A
Drain Current (pulse)
Note1
ID(pulse)
±88
A
Total Power Dissipation (TC = 25°C)
PT1
20
W
Total Power Dissipation
Note2
PT2
1.5
W
Total Power Dissipation (TA = 25°C)
PT3
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. TA = 25°C, mounted on FR-4 board of 1225 mm
2×1.6 mm
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3507
TO-251
2SK3507-Z
TO-252
(TO-251)
(TO-252)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3511-S-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3511-AZ | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3511-Z | 83 A, 75 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3518-01MR | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3565 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3510-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
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