- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄31712 > 2SK3399 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3399 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 271K |
| 代理商： | 2SK3399 |
2SK3399
2006-11-08
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3399
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.54 (typ)
High forward transfer admittance: |Yfs| = 5.2 S (typ)
Low leakage current: IDSS = 100 A (max) (VDSS = 600 V)
Enhancementmode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
600
V
Drain-gate voltage (RGS = 20 k)
VDGR
600
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
40
A
Drain power dissipation (Tc
= 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
363
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
83.3
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 ,
IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3419-E | 90 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3426G | 0.46 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK3430-Z-AZ | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3430 | 80 A, 40 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3482 | 36000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3399(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 10A 3-Pin (3+Tab) TO-220FL 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 10A 3-Pin (3+Tab) TO-220FL Cut Tape 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 10A TO220FL |
| 2SK3399_06 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
| 2SK3399_09 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3399-SM(Q) | 制造商:Toshiba 功能描述:Cut Tape |
| 2SK34 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:2SK34 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。