參數(shù)資料
型號: 2SK3326
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數(shù): 4/8頁
文件大?。?/td> 70K
代理商: 2SK3326
Data Sheet D14204EJ1V0DS00
4
2SK3326
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
10
1
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
r
t
T
c
= 25 C
Single Pulse
0.01
R
th(ch-C)
= 3.2 C/W
R
th(ch-A)
= 62.5 C/W
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
1
10
I
f
I
I
D
- Drain Current - A
0.01
0.01
100
0.1
T
A
= –25 C
25 C
75 C
125 C
V
DS
= 10 V
Pulsed
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
10
15
20
V
GS
- Gate to Source Voltage - V
R
D
Pulsed
25
0
5
0.0
2.0
1.0
I
D
= 10 A
5.0 A
2.0 A
R
D
3.0
2.0
0
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.1
10
I
D
- Drain Current - A
1
Pulsed
1.0
100
V
G
1.0
0.0
–50
0
50
100
150
200
T
ch
- Channel Temperature - C
Figure10. GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
2.0
3.0
4.0
V
DS
= 10 V
I
D
= 1 mA
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