參數(shù)資料
型號: 2SK3298
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關功率場效應晶體管 工業(yè)級
文件頁數(shù): 1/8頁
文件大小: 69K
代理商: 2SK3298
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confirm that this is the latest version.
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availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
Date Published
Printed in Japan
D14059EJ1V0DS00 (1st edition)
April 2000 NS CP(K)
DATA SHEET
The mark
#
shows major revised points.
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a
low gate charge and excellent switching characteristics,
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 34 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 7.5 A)
Gate voltage rating
±
30 V
Low on-state resistance
R
DS(on)
= 0.75
MAX. (V
GS
= 10 V, I
D
= 4.0 A)
Avalanche capability ratings
Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±
7.5
A
Drain Current (Pulse)
Note1
I
D(pulse)
±
30
A
Total Power Dissipation (T
A
= 25°C)
P
T1
2.0
W
Total Power Dissipation (T
C
= 25°C)
P
T2
40
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Single Avalanche Current
Note2
I
AS
7.5
A
Single Avalanche Energy
Note2
E
AS
37.5
mJ
Notes 1.
PW
10
μ
s, Duty Cycle
1 %
2.
Starting T
ch
= 25 °C, V
DD
= 150 V, R
G
= 25
,
V
GS
= 20 V
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3298
Isolated TO-220
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