- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369204 > 2SK3296-S (NEC Corp.) MOS FIELD EFFECT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SK3296-S |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 422K |
| 代理商： | 2SK3296-S |
Data Sheet D14063EJ2V0DS
3
2SK3296
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
00
2
3
100
160
120
140
1
Pulsed
V
GS
=10 V
40
20
60
80
7.0 V
4.5 V
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
0
1
2
3
4
5
6
V
= 10 V
10
1
0.1
0.01
0.001
100
1000
T
ch
=
50
C
25
C
25
C
75
C
125
C
150
C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
T
ch
- Channel Temperature -
C
V
G
V
= 10 V
I
D
= 1 mA
1.0
1.5
0.5
2.0
2.5
50
0
50
100
150
0
f
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
Pulsed
V
DS
= 10 V
10
1
100
0.1
0.1
1
10
100
T
ch
=
50
C
25
C
25
C
75
C
150
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
D
0
0
10
5
15
20
30
40
50
Pulsed
I
= 28 A
18 A
7 A
10
20
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
10
10
1
20
30
40
50
1000
100
Pulsed
0
V
GS
= 4.5 V
7.0 V
10 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3296-ZJ | MOS FIELD EFFECT TRANSISTOR |
| 2SK3296-ZK | MOS FIELD EFFECT TRANSISTOR |
| 2SK3298 | Switching N-channel power MOS FET industrial use |
| 2SK3299-S | Switching N-channel power MOS FET industrial use |
| 2SK3299-ZJ | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3296-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3296-ZK | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297 | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3297(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3298 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。