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參數(shù)資料
| 型號(hào)： | 2SK3229 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | 2SK3229 |
2SK3229
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
80
—
—
V
I
D
= 10mA, V
GS
= 0
V
GS
=
±
20V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V*
1
I
D
= 30A, V
GS
= 10V*
1
I
D
= 30A, V
GS
= 4V*
1
I
D
= 30A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
6.0
7.5
m
m
resistance
—
8.0
12
Forward transfer admittance
|y
fs
|
Ciss
50
85
—
S
Input capacitance
—
9700
—
pF
Output capacitance
Coss
—
1250
—
pF
Reverse transfer capacitance
Crss
—
290
—
pF
Total gate charge
Qg
—
150
—
nc
V
DD
= 25V
V
GS
= 25V
I
D
= 60A
V
GS
= 10V, I
D
= 30A
R
L
= 1
Gate to source charge
Qgs
—
30
—
nc
Gate to drain charge
Qgd
—
30
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
80
—
ns
Rise time
—
280
—
ns
Turn-off delay time
—
780
—
ns
Fall time
—
340
—
ns
Body–drain diode forward voltage
—
1.0
—
V
I
F
= 60A, V
GS
= 0
I
= 60A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
80
—
ns
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