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參數(shù)資料
| 型號： | 2SK3176PBF |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 161K |
| 代理商： | 2SK3176PBF |
2SK3176
2009-09-29
5
0.003
100 m
10 m
0.01
1
10
0.005
0.3
3
0.03
0.5
0.05
0.1
10
μ
100
μ
1 m
Duty
= 0.5
0.02
0.2
0.1
0.05
Single pulse
0.01
T
PDM
t
Duty
= t/T
Rth (ch-c) = 0.833°C/W
rth – tw
Pulse width tw (s)
Normali
zed
tra
nsie
nt
thermal
impedan
ce
r th
/R
th
(c
h-c
)
Safe Operating Area
EAS – Tch
Channel temperature (initial) Tch (°C)
D
ra
in
cu
rr
ent
I
D
(A)
A
valan
che
ener
gy
E
AS
(mJ)
Test circuit
Wave form
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 50 V, L = 1.66 mH
=
V
B
LI
2
1
Ε
DD
VDSS
2
AS
15 V
0
25
400
1000
150
75
200
600
800
50
100
125
*: Single nonrepetitive
pulse Tc
= 25°C
Curves must be derated
linearly with increase in
temperature.
ID max (continuous)
ID max (pulse)*
VDSS max
1 ms*
100 μs*
DC operation
Tc
= 25°C
0.1
1
3
5
10
30
50
100
10
30
300 500
1
5
50
100
300
3
0.3
0.5
Drain-source voltage VDS (V)
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