參數資料
型號: 2SK3176
元件分類: JFETs
英文描述: 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: 2-16C1B, SC-65, 3 PIN
文件頁數: 4/6頁
文件大小: 161K
代理商: 2SK3176
2SK3176
2009-09-29
4
0
100
250
200
80
50
150
200
40
120
160
30
0
Common source
Tc
= 25°C
Pulse test
5
10
VGS = 0 V
3
0.4
0.8
1.2
1.6
2.0
100
1
5
50
10
3
30
300
Common source
VGS = 0 V
f
= 1 MHz
Tc
= 25°C
1000
10000
3000
0.1
0.3
1
10
30
100
3
Crss
Coss
Ciss
100
0
80
160
40
80
120
Common source
VGS = 10 V
Pulse test
15
0
0.02
0.04
0.06
0.08
0.10
ID = 30 A
7.5
0
10
20
5
15
0
100
200
80
50
150
40
120
160
VDS
VGS
160
VDD = 40 V
80
Common source
ID = 30 A
Tc
= 25°C
Pulse test
80
160
80
40
0
120
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
5
3
1
2
4
RDS (ON) – Tc
IDR – VDS
Case temperature Tc (
°C)
Drain-source voltage VDS (V)
Drain-
sour
ce
O
N
re
sist
an
ce
R
DS
(ON)
(
Ω
)
Drain
re
ver
se
curr
en
t
I
DR
(A)
Capacitance – VDS
Vth – Tc
Drain-source voltage VDS (V)
Case temperature Tc (
°C)
Cap
ac
ita
nc
e
C
(p
F
)
Gate
th
resh
old
volt
age
V
th
(V)
PD – Tc
Dynamic Input/Output
Characteristics
Case temperature Tc (
°C)
Total gate charge Qg (nC)
Drain
po
wer
di
ssip
ation
P
D
(W)
Drain-
sour
ce
volt
ag
e
V
DS
(V)
Gate-
sour
ce
vo
ltag
e
V
GS
(V)
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相關代理商/技術參數
參數描述
2SK3176(F) 功能描述:MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3176_07 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications
2SK3176_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC-DC Converter and Motor Drive Applications
2SK3177 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3177-E 制造商:Renesas Electronics Corporation 功能描述: