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參數(shù)資料
| 型號(hào)： | 2SK3176 |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-16C1B, SC-65, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 161K |
| 代理商： | 2SK3176 |
2SK3176
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut-off current
IDSS
VDS = 200 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
200
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 15 A
38
52
m
Ω
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 15 A
15
30
S
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
5400
pF
Reverse transfer capacitance
Crss
VDS = 10 V, VGS = 0 V, f = 1 MHz
580
pF
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
1900
pF
Rise time
tr
15
Turn-on time
ton
55
Fall time
tf
25
Switching time
Turn-off time
toff
190
ns
Total gate charge
(gate-source plus gate-drain)
Qg
VDD 160 V, VGS = 10 V, ID = 30 A
125
nC
Gate-source charge
Qgs
VDD 160 V, VGS = 10 V, ID = 30 A
80
nC
Gate-drain (“miller”) charge
Qgd
VDD 160 V, VGS = 10 V, ID = 30 A
45
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
30
A
Pulse drain reverse current
(Note 1)
IDRP
90
A
Forward voltage (diode)
VDSF
IDR = 30 A, VGS = 0 V
2.0
V
Reverse recovery time
trr
IDR = 30 A, VGS = 0 V,
dIDR/dt = 100 A/μs
270
ns
Reverse recovery charge
Qrr
IDR = 30 A, VGS = 0 V,
dIDR/dt = 100 A/μs
3.0
μC
Marking
0 V
10 V
VGS
R
L
=6.7
Ω
VDD 100 V
ID = 15 A
VOUT
4.7
Ω
Duty
≤ 1%, tw = 10 μs
K3176
TOSHIBA
Lot No.
Note 5
Product No.
(or abbreviation code)
Note 5: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3176(F) | 功能描述:MOSFET MOSFET N-Ch 200V 30A Rdson 0.052 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3176_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 2SK3176_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 2SK3177 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3177-E | 制造商:Renesas Electronics Corporation 功能描述: |
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