- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370113 > 2SK3153 (Hitachi,Ltd.) Silicon N Channel MOS FET(N溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號： | 2SK3153 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 143K |
| 代理商： | 2SK3153 |
2SK3153
2
Note: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25
°
C
Value at Tch = 25
°
C, Rg
≥
50
Electrical Characteristics (Ta = 25
°
C)
Note: 4. Pulse test
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Tch
Tstg
30
150
–55 to +150
W
°
C
°
C
Item
Drain to source breakdown voltage V
(BR)DSS
120
Gate to source breakdown voltage V
(BR)GSS
±
20
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Symbol
Min
Typ
—
—
—
—
—
65
80
14
860
360
195
15
95
200
130
0.9
100
Max
—
—
±
10
10
2.5
85
110
—
—
—
—
—
—
—
—
—
—
Unit
V
V
μ
A
μ
A
V
m
m
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 120 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V
Note4
I
D
= 8 A, V
GS
= 4 V
Note4
I
D
= 8 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 8 A, V
GS
= 10 V
R
L
= 3.75
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
—
1.0
—
—
8.5
—
—
—
—
—
—
—
—
—
I
F
= 15 A, V
GS
= 0
I
F
= 15 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
Item
Symbol
Ratings
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3155 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3156 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK315 | FM Tuner Applications N-Channel Junction Silicon FET(FM調(diào)諧應(yīng)用的N溝道結(jié)型硅場效應(yīng)管) |
| 2SK3160 | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK3162 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3153-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3154-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3155 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3155-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 15A 3-Pin(3+Tab) TO-220FM Box |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。