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參數(shù)資料
| 型號： | 2SK3147L |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK3147L |
2SK3147(L),2SK3147(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
100
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
5A
Drain peak current
I
D(pulse)
Note1
20
A
Body-drain diode reverse drain current
I
DR
5A
Avalanche current
I
AP
Note3
5A
Avalanche energy
E
AR
Note3
2.5
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3147S-E | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3176 | 30 A, 200 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3367 | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3367-Z | 36000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3399 | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3147-L(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 5A 3-Pin(3+Tab) DPAK(L)-(2) |
| 2SK3147L-E | 制造商:Renesas Electronics 功能描述:Tray 制造商:Renesas Electronics Corporation 功能描述:N-channel MOSFET, 100V,5A,0.1ohm,DPAK-L |
| 2SK3147S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3147S-E | 制造商:Renesas Electronics Corporation 功能描述:Bulk 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 5A 3-Pin(2+Tab) DPAK |
| 2SK3147STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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