參數(shù)資料
型號(hào)： 2SK3070S
廠商： Hitachi,Ltd.
英文描述： Silicon N Channel MOS FET(N溝道MOSFET)
中文描述： 硅?通道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的）
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 73K
代理商： 2SK3070S
2SK3070(L),2SK3070(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
40
—
—
V
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note1
I
D
= 40 A, V
GS
= 10 V
Note1
I
D
= 40 A, V
GS
= 4 V
Note1
I
D
= 40 A, V
DS
= 10 V
Note1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
Zero gate voltage drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
4.5
5.8
m
m
resistance
—
6.5
10
Forward transfer admittance
|y
fs
|
Ciss
50
80
—
S
Input capacitance
—
6800
—
pF
Output capacitance
Coss
—
1300
—
pF
Reverse transfer capacitance
Crss
—
380
—
pF
Total gate charge
Qg
—
130
—
nc
V
DD
= 25 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.75
Gate to source charge
Qgs
—
25
—
nc
Gate to drain charge
Qgd
—
30
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
60
—
ns
Rise time
—
300
—
ns
Turn-off delay time
—
550
—
ns
Fall time
—
400
—
ns
Body–drain diode forward voltage
—
1.05
—
V
I
F
= 75 A, V
GS
= 0
I
= 75 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
90
—
ns
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參數(shù)描述
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