- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369203 > 2SK3112-S (NEC Corp.) SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3112-S |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET的工業(yè)用 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 79K |
| 代理商： | 2SK3112-S |
1998,2001
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
R
DS(on)
= 110 m
MAX. (V
GS
= 10 V, I
D
= 13 A)
Low input capacitance
C
iss
= 1600 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AS
E
AS
200
±
30
±
25
±
75
100
1.5
150
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
55 to +150
25
250
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 100 V, R
G
= 25
, V
GS
= 20 V
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3112
TO-220AB
2SK3112-S
TO-262
2SK3112-ZJ
TO-263(MP-25ZJ)
(TO-220AB)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3112-ZJ | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3112 | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3113B | MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15-AY | MOS FIELD EFFECT TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3112-Z | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3112ZJ | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 25A I(D) | TO-263AB |
| 2SK3112-ZJ | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3113 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO251 Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。