參數(shù)資料
型號: 2SK2980
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場效應(yīng)晶體管高速電源開關(guān)
文件頁數(shù): 5/9頁
文件大小: 43K
代理商: 2SK2980
2SK2980
5
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
0
0.5 A
0.2 A
5
2
1
0.2
0.5
0.1
0.05
0.01 0.02
0.05 0.1
Drain Current I (A)
0.2
0.5
I = 0.1 A, 0.2 A, 0.5 A
V = 2.5 V
4 V
0.1 A, 0.2 A, 0.5 A
I = 1 A
2
1
0.2
0.5
0.1
0.05
0.1
0.2
0.5
1
2
5
V = 2.5 V
4 V
1
25 °C
Tc = –25 °C
75 °C
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
W
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (°C)
R
D
S
W
Static Drain to Source on State Resistance
vs. Temperature
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
V = 10 V
Pulse Test
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