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參數(shù)資料
| 型號： | 2SK2980 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 43K |
| 代理商： | 2SK2980 |
2SK2980
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 100
μ
A, V
GS
= 0
Gate to source breakdown
V
(BR)GSS
+12
—
—
V
I
G
= +100
μ
A, V
DS
= 0
I
G
= –100
μ
A, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
voltage
–10
—
—
V
Zero gate voltege drain
current
I
DSS
—
—
1.0
μ
A
Gate to source leak current
I
GSS
V
GS(off)
R
DS(on)
—
—
±
5.0
μ
A
V
GS
=
±
8V, V
DS
= 0
I
D
= 10
μ
A, V
DS
= 5V
I
D
= 500 mA
V
GS
= 4V
Note3
I
D
= 500 mA
V
GS
= 2.5V
Note3
I
D
= 500 mA
V
DS
= 10V
Note3
V
DS
= 10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
0.5
—
1.5
V
Static drain to source on state
resistance
—
0.2
0.28
Static drain to source on state
resistance
R
DS(on)
—
0.3
0.5
Forward transfer admittance
|y
fs
|
1.2
2.0
—
S
Input capacitance
Ciss
—
155
—
pF
Output capacitance
Coss
—
75
—
pF
Reverse transfer capacitance Crss
—
35
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
—
12
—
ns
V
GS
= 4V, I
D
= 500 mA
R
L
= 20
Rise time
—
30
—
ns
Turn-off delay time
—
35
—
ns
Fall time
Note:
—
30
—
ns
3. Pulse test
4. Marking is “ZZ– ”
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| 2SK2981 | Switching N-channel power MOS FET industrial use |
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| 2SK2983-ZJ | Switching N-channel power MOS FET industrial use |
| 2SK2983 | Switching N-channel power MOS FET industrial use |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2980ZZ-TL(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2985 | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220NIS |
| 2SK2986 | 制造商:Toshiba 功能描述:Nch 60V 55A TO220FL/SM Cut Tape |
| 2SK2989 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 50V 5A 3PIN L-STM - Bulk |
| 2SK2989(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 50V 5A 3-Pin TO-92 Mod |
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