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參數(shù)資料
| 型號： | 2SK2851 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 50K |
| 代理商： | 2SK2851 |
2SK2851
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltege drain
current
I
DSS
—
—
10
μ
A
V
DS
= 60 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
—
—
±
10
μ
A
V
GS
=
±
16V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 2.5A, V
GS
= 10V*
1
I
D
= 2.5A, V
GS
= 4V*
1
I
D
= 2.5A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state R
DS(on)
resistance
—
0.055
0.07
R
DS(on)
|y
fs
|
Ciss
—
0.07
0.1
Forward transfer admittance
5
7
—
S
Input capacitance
—
500
—
pF
Output capacitance
Coss
—
260
—
pF
Reverse transfer capacitance
Crss
—
110
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
V
GS
= 10V, I
D
= 2.5A
R
L
= 12
Rise time
—
30
—
ns
Turn-off delay time
—
100
—
ns
Fall time
—
75
—
ns
Body to drain diode forward
voltage
—
0.9
—
V
I
D
= 5A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
50
—
ns
I
= 5A, V
= 0
diF/ dt = 50A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2854(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET RF N CH 10V 500MA |
| 2SK2857-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2857-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2857-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
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