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參數(shù)資料
| 型號： | 2SK2807-01S |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 35 A, 30 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPAK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 270K |
| 代理商： | 2SK2807-01S |
2SK2807-01L,S
FAP-IIS Series
N-channel MOS-FET
20m
30V
±35A
30W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Repetitive Avalanche Rated
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ
W
°C
°C
30
±35
±140
±16
129.3
30
150
-55 ~ +150
L=0,070mH, Vcc=12V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
BV
DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=30V
V
GS
=0V
V
GS
=±16V
I
D
=17,5A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
m
m
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=15V
I
D
=35A
V
GS
=10V
R
GS
=10
T
ch
=25°C
30
1,0
1,5
10
0,2
10
22
14
33
2,0
500
1,0
100
30
20
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
I
D
=17,5A
16
1100
550
240
1650
830
360
9
15
75
15
50
115
23
75
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=2xI
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
35
0,98
50
0,08
1,71
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-c)
R
th(ch-a)
Test conditions
channel to case
channel to air
Min.
Typ.
Max.
4,16
125,0
Unit
°C/W
°C/W
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