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參數(shù)資料
| 型號： | 2SK2809-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 16V; Case Size: 10x20 mm; Packaging: Bulk |
| 中文描述： | 50 A, 60 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 402K |
| 代理商： | 2SK2809-01MR |
2SK2809-01MR
FAP-IIIB Series
N-channel MOS-FET
0,01
60V
50A
50W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
Avalanche Rated
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
I
D
I
D(puls)
V
GS
E
AV
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ*
W
°C
°C
60
50
200
±20
453
50
150
-55 ~ +150
* L=0,241mH, V
CC
=24V
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=60V
V
GS
=0V
V
GS
=±20V
I
D
=40A
Min.
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
60
1,0
1,5
10
0,2
10
2,0
500
1,0
100
0,017
0,01
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=75A
V
GS
=10V
R
GS
=10
T
ch
=25°C
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
0,012
0,0075
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
I
D
=40A
25
55
3500
1250
360
15
75
190
110
5250
1870
540
23
120
285
165
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L = 100μH
I
F
=160A V
GS
=0V T
ch
=25°C
I
F
=80A V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
50
1,15
75
0,17
1,65
120
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
2,50 °C/W
Unit
°C/W
Collmer Semconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com- 11/98
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